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Compound Semiconductor Power Transistors & State-Of-The-Art Program on Compound Semiconductors State-Of-The-Art Program on Compound Semiconductors (Sotapocs Xxix by

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Published by Electrochemical Society .
Written in English

Subjects:

  • Congresses,
  • Power transistors,
  • Field-effect transistors,
  • Compound semiconductors,
  • Science/Mathematics,
  • Design and construction

Book details:

Edition Notes

ContributionsElectrochemical Society Electronics Division (Corporate Author), F. Ren (Editor), D. N. Buckley (Editor), S. N. G. Chu (Editor), John C. Zolper (Editor), C. R. Abernathy (Editor), S. J. Pearton (Editor), J. M. Parsey (Editor)
The Physical Object
FormatHardcover
Number of Pages319
ID Numbers
Open LibraryOL8671065M
ISBN 101566772222
ISBN 109781566772228

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Presented at the October symposia meetings, these 18 papers representing the program on compound semiconductors (SOTAPOCS 47) and 15 from the wide bandgap program reflect the current range of research in both theory and applications. SOTAPOCS papers cover compound semiconductor growth and process technology (including end point detection of GaAs backsides via .   Free Online Library: State-of-the-art program on compound semiconductor 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8; proceedings.(Brief article, Book review) by "SciTech Book News"; Publishing industry Library and information science Science and technology, general Books Book reviews. Keywords: compound semiconductor, MOVPE, MBE, wide-bandgap semiconductor, power semiconductor device D C S D!I S I P! Hideki HayasHi Table 1. Periodical table of major elements of compound semiconductors II III IV V VI B C N O Al Si P S Zn Ga Ge As Se Cd In Sn Sb TeFile Size: KB. The paper is on p. of “Compound semiconductor power transistors II and state-of-the-art program on compound semiconductors (SO-TAPOCS XXXII) M Hong H M Ng.

Richard Y. Koyama, in Handbook of Compound Semiconductors, A BRIEF HISTORICAL PERSPECTIVE. Compound semiconductor materials and devices have been the topic of research for more than twenty years by a large number of engineers and scientists in a large number of varied institutions. In particular, the family of III-V compounds which have been synthesized in the laboratory . This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. This one year research program on compound semiconductor materials growth, devices and circuits has focused on: (a) organometallic vapor phase epitaxy (OMVPE) of GaInP/GaAs and AlInP/GaInP. This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode.

Author: J.C. Woo Publisher: CRC Press ISBN: Size: MB Format: PDF, ePub Category: Science Languages: en Pages: View: Get Book. Book Description: Compound Semiconductors was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to Septem . compound semiconductor devices and analysis techniques for small dimension devices. It should be appealing to students who have already achieved an un-derstanding of the principles of operation of field effect transistors and bipolar transistors. While the emphasis of the treatment is on compound . A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors typically form in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth). III–V COMPOUND SEMICONDUCTOR TRANSISTORS—FROM PLANAR TO NANOWIRE STRUCTURES MRS BULLETIN • VOLUME 39 • AUGUST • w w w. m r s. o r g / b u l l e t i n minimize the supply voltage and OFF-state power consump-tion. The steepness of the transition around threshold is mea-.